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MBR(F,B)25H35CT thru MBR(F,B)25H60CT
www.vishay.com
Vishay General Semiconductor
Revision: 27-Jun-12
1
Document Number: 88789
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
? Guardring for overvoltage protection
? Lower power losses,
high efficiency
? Low forward voltage drop
? Low leakage current
? High forward surge capability
? High frequency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
? Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
? AEC-Q101 qualified
? Material categorization: For
definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters or polarity
protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.54 V, 0.60 V
IR
100 μA
TJ max. 175 °C
TO-263AB
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR25HxxCT
ITO-220AB
MBRB25HxxCT
PIN 1
PIN 2
K
HEATSINK
1
32
1
2
K
MBRF25HxxCT
PIN 2
PIN 1
PIN 3
3
1
2
MAXIMUM RATINGS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT UNIT
Maximum repetitive peak reverse voltage VRRM
35 45 50 60
V
Working peak reverse voltage VRWM
35 45 50 60
Maximum DC blocking voltage VDC
35 45 50 60
Max. average forward
rectified current (Fig. 1)
total device
IF(AV)
per diode 15
30
A
Non-repetitive avalanche energy per diode
at 25 °C, IAS
= 4 A, L = 10 mH
EAS
80 mJ
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150 A
Peak repetitive reverse surge current per diode
at tp
= 2.0 μs, 1 kHz
IRRM
1.0 0.5 A
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